Thermal diffuse scattering as a probe of large-wave-vector phonons in silicon nanostructures.

نویسندگان

  • Gokul Gopalakrishnan
  • Martin V Holt
  • Kyle M McElhinny
  • Josef W Spalenka
  • David A Czaplewski
  • Tobias U Schülli
  • Paul G Evans
چکیده

Large-wave-vector phonons have an important role in determining the thermal and electronic properties of nanoscale materials. The small volumes of such structures, however, have posed significant challenges to experimental studies of the phonon dispersion. We show that synchrotron x-ray thermal diffuse scattering can be adapted to probe phonons with wave vectors spanning the entire Brillouin zone of nanoscale silicon membranes. The thermal diffuse scattering signal from flat Si nanomembranes with thicknesses from 315 to 6 nm, and a sample volume as small as 5 μm(3), has the expected linear dependence on the membrane thickness and also exhibits excess intensity at large wave vectors, consistent with the scattering signature expected from low-lying large-wave-vector modes of the membranes.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Abstract Submitted for the MAR14 Meeting of The American Physical Society Probing Large-Wavevector Phonons in Strain-Relief Patterned Silicon/Silicon Germanium Heterostructure Nanomembranes KYLE

Submitted for the MAR14 Meeting of The American Physical Society Probing Large-Wavevector Phonons in Strain-Relief Patterned Silicon/Silicon Germanium Heterostructure Nanomembranes KYLE MCELHINNY, Univ of Wisconsin, Madison, GOKUL GOPALAKRISHNAN, Univ of Wisconsin, Platteville, DON SAVAGE, MAX LAGALLY, Univ of Wisconsin, Madison, MARTIN HOLT, Center for Nanoscale Materials, Argonne National Lab...

متن کامل

Monte Carlo Modeling of Heat Generation in Electronic Nanostructures

This work develops a Monte Carlo (MC) simulation method for calculating the heat generation rate in electronic nanostructures. Electrons accelerated by the electric field scatter strongly with optical phonons, yet heat transport in silicon occurs via the faster acoustic modes. The MC method incorporates the appropriate energy transfer rates from electrons to each phonon branch. This accounts fo...

متن کامل

Increased phonon scattering by nanograins and point defects in nanostructured silicon with a low concentration of germanium.

The mechanism for phonon scattering by nanostructures and by point defects in nanostructured silicon (Si) and the silicon germanium (Ge) alloy and their thermoelectric properties are investigated. We found that the thermal conductivity is reduced by a factor of 10 in nanostructured Si in comparison with bulk crystalline Si. However, nanosize interfaces are not as effective as point defects in s...

متن کامل

Lifetimes of confined acoustic phonons in ultrathin silicon membranes.

We study the relaxation of coherent acoustic phonon modes with frequencies up to 500 GHz in ultrathin free-standing silicon membranes. Using an ultrafast pump-probe technique of asynchronous optical sampling, we observe that the decay time of the first-order dilatational mode decreases significantly from ~4.7 ns to 5 ps with decreasing membrane thickness from ~194 to 8 nm. The experimental resu...

متن کامل

Solution of the Phonon Boltzmann Transport Equation Employing Rigorous Implementation of Phonon Conservation Rules

A finite volume scheme is developed to solve the phonon Boltzmann transport equation in an energy form accounting for phonon dispersion and polarization. The physical space and the first Brillouin zone are discretized into finite volumes and the phonon BTE is integrated over them. Second-order accurate differencing schemes are used for the discretization. The scattering term employs a rigorous ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:
  • Physical review letters

دوره 110 20  شماره 

صفحات  -

تاریخ انتشار 2013